adva nced power electronics corp. ?2013 advanced power electronics corp. usa www.a-powerusa.com p-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d a i d a i dm d at t a =2 5c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP9565GEM-HF-3 is in the so-8 package, which is widely used bv -40v fast switching performance r 38mw simple drive requirement low on-resistance rohs-compliant , halogen-free i - 6.5 a drain-source voltage - 4 0 v 16 v at t =2 5 c - 6.5 a at t = 7 0 c - 5.2 a - 3 0 a p total power dissipation 2.5 w linear derating factor 0.02 w/c for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. o rdering information ap9 565gem -hf-3 1/5 200605031-3 ap 9565gem - hf- 3 t r : in rohs-compliant halogen-free s o-8 , shipped on tape and reel (30 00 pcs /reel) g d s s s s g d d d d so-8 (m) rthj-a maximum thermal resistance, junction- ambient 3 50 c /w
adva nced power electronics corp. ?2013 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. copper pad of fr4 board; 125c/w on minimum copper pad. 2 3.surface mounted on 1 in AP9565GEM-HF-3 2/5 symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =-1ma - -0.02 - v/c r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 38 mw v gs =-4.5v, i d =-4a - - 48 mw v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 16v - - 30 ua q g total gate charge 2 i d =-6a - 12.8 20 nc q gs gate-source charge v ds =-30v - 2.1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6.3 - nc t d(on) turn-on delay time 2 v ds =-20v - 8.9 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3w , v gs =-10v - 26.9 - ns t f fall time r d =20w - 36.9 - ns c iss input capacitance v gs =0v - 980 1570 pf c oss output capacitance v ds =-25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 6 9 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-6a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 19 - nc
adva nced power electronics corp. ?2013 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics AP9565GEM-HF-3 3/5 0 10 20 30 024681 0 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 20 40 60 80 100 120 24681 0 -v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =-4a t a =25 o c 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g = -10v 0 10 20 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 20.0 30.0 40.0 50.0 60.0 01 02 03 04 0 -i d , drain current (a) r ds(on) (m ? ) v gs = -4.5v v gs = -10v
adva nced power electronics corp. ?2013 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform typical electrical characteristics (cont.) AP9565GEM-HF-3 4/5 0 4 8 12 16 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -6a v ds = -30v 10 100 1000 10000 1 5 9 1 31 72 12 52 9 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh c iss c oss c rss q v g -4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 10 20 30 40 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c r thja =125c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
adva nced power electronics corp. ?2013 advanced power electronics corp. usa www.a-powerusa.com package dimensions: so-8 marking information: AP9565GEM-HF-3 5/5 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 q 0 4.00 8.00 e 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 1.27 typ c detail a a1 a 9565gem ywwsss package: product: ap9565 detail a l q date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e b 1 34 5678 2 d e1 e gem = rohs-compliant halogen-free so-8
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